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August 1998
FDT457N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V RDS(ON) = 0.090 @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
D
D
S D
SOT-223
S
G D S
G
SOT-223*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage
TA = 25oC unless otherwise noted FDT457N 30 20
(Note 1a)
Units V V A
Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
5 16 3 1.3 1.1 -65 to 150
W
TJ,TSTG RJA RJC
Operating and Storage Temperature Range
C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
C/W C/W
* Order option J23Z for cropped center drain lead.
(c) 1998 Fairchild Semiconductor Corporation
FDT457N Rev.C
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ =55C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 2)
o
30 35 1 10 100 -100
V mV/ C A A nA nA
o
BVDSS/TJ
IDSS
VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25 oC VGS = 10 V, ID = 5 A TJ =125C VGS = 4.5 V, ID = 3.8 A 1 1.6 -4.2 0.043 0.065 0.071 5 5
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance
3
V mV/ oC
VGS(th)/TJ
RDS(ON)
0.06 0.1 0.09
ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
Notes:
On-State Drain Current Forward Transconductance
VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 5 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
A S
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 235 145 50 pF pF pF
SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10 V, ID = 5 A, VGS = 5 V VDD = 10 V, ID = 1 A, VGS = 10 V, RGEN = 6 5 12 12 3 4.2 1.3 1.7 10 22 22 8 5.9 ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A
(Note 2)
2.5 0.85 1.2
A V
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of guaranteed by design while RCA is determined by the user's board design.
the drain pins. RJC is
a. 42oC/W when mounted on a 1 in2 pad of 2oz Cu.
b. 95oC/W when mounted on a 0.066 in pad of 2oz Cu.
2
c. 110oC/W when mounted on a 0.00123 in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDT457N Rev.C
Typical Electrical Characteristics
10 I D , DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
R DS(ON), NORMALIZED
VGS = 10V 6.0 5.0 8 4.5 4.0
6
2.5
VGS =3.5V
2
4.0
1.5
3.5
4
4.5 5.0 6.0 7.0
2
3.0
1
10
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
VDS , DRAIN-SOURCE VOLTAGE (V)
I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
RDS(ON) DRAIN-SOURCE ON-RESISTANCE ,
1.6 DRAIN-SOURCE ON-RESISTANCE
0.25
ID = 5 A
1.4
I D = 2A
0.2
VGS = 10V
R DS(ON) , NORMALIZED
1.2
0.15
1
0.1
T = 125C A
0.05
0.8
T = 25C A
0 2 4 6 8 10
0.6 -50
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (C)
J
125
150
VGS ,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
VDS = 10V
TA = -55C 25C 125C
I S , REVERSE DRAIN CURRENT (A)
14 12 I D , DRAIN CURRENT (A) 10 8 6 4 2 0
10
VGS = 0V
1
TJ = 125C 25C -55C
0.1
0.01
0.001
1
2
3
4
5
6
0.0001
0
VGS , GATE TO SOURCE VOLTAGE (V)
0.2 0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDT457N Rev.C
Typical Electrical Characteristics
1000
10 V GS , GATE-SOURCE VOLTAGE (V)
I D = 4A
8
CAPACITANCE (pF)
VDS = 5V 10V 15V
400
C iss Coss
6
200
4
100
2
50
0 0 2 Q 4 6 8
f = 1 MHz VGS = 0 V
0.3 1 3
C rss
30 0.1
10
30
g
, GATE CHARGE (nC)
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50 20 I D , DRAIN CURRENT (A) 10 5
IT LIM N) S(O RD
200
100 1m s s 10m s
POWER (W)
160
1 0.5
100 ms 1s 10s DC
SINGLE PULSE RJA =110C TA = 25C
120
80
0.1 0.05
V GS = 10V SINGLE PULSE RJA = 110C/W TA = 25C A
0.2 0.5 V
DS
40
0.01 0.1
1
2
5
10
20
50
0 0.001
0.01
0.1
1
10
100
300
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R JA (t) = r(t) * R JA R JA = 110 C/W
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1/ t 2
100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design.
FDT457N Rev.C

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